Elemental composition of nanoclusters formed by pulsed irradiation with low-energy ions during Ge/Si epitaxy-Reference-Cited by-同舟云学术

Elemental composition of nanoclusters formed by pulsed irradiation with low-energy ions during Ge/Si epitaxy

Published:2004-04 Issue:7 Volume:79 Page:333-336
ISSN:0021-3640
Container-title:Journal of Experimental and Theoretical Physics Letters
language:en
Short-container-title:Jetp Lett.

Author:

Dvurechenskii A. V.,Smagina Zh. V.,Zinov’ev V. A.,Armbrister V. A.,Volodin V. A.,Efremov M. D.

Publisher

Pleiades Publishing Ltd

Subject

Physics and Astronomy (miscellaneous)

Link

http://link.springer.com/content/pdf/10.1134/1.1765177.pdf

Reference16 articles.

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4. O. P. Pchelyakov, Yu. B. Bolkhovityanov, A. V. Dvurechenskii, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 34, 1281 (2000) [Semiconductors 34, 1229 (2000)].

5. S. B. Érenburg, N. V. Bausk, A. V. Nenashev, et al., Zh. Strukt. Khim. 41, 890 (2000).

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