Ge/Si nanostructures with quantum dots grown by ion-beam assisted heteroepitaxy
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
http://stacks.iop.org/1742-6596/245/i=1/a=012071/pdf
Reference8 articles.
1. Quantum dot heterostructures: Fabrication, properties, lasers (Review)
2. The history and future of semiconductor heterostructures
3. Ge/Si quantum dot nanostructures grown with low-energy ion beam-assisted epitaxy
4. Stress-induced nanoislands nucleation during growth of Ge/Si heterostructures under low-energy ion irradiation
5. Self-assembly of germanium islands under pulsed irradiation by a low-energy ion beam during heteroepitaxy of Ge/Si(100) structures
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Ion Beam-Assisted Deposition;Low-Energy Ion Irradiation of Materials;2022
2. Self-assembled asymmetric membrane containing micron-size germanium for high capacity lithium ion batteries;RSC Advances;2015
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