Phase transition on the Si(001) clean surface prepared in UHV MBE chamber: a study by high-resolution STM and in situ RHEED

Author:

Arapkina Larisa V,Yuryev Vladimir A,Chizh Kirill V,Shevlyuga Vladimir M,Storojevyh Mikhail S,Krylova Lyudmila A

Publisher

Springer Science and Business Media LLC

Subject

Condensed Matter Physics,General Materials Science

Reference54 articles.

1. Yuryev VA, Arapkina LV, Chapnin VA, Kalinushkin VP, Kiryanova NV, Uvarov OV, Chizh KV, Krylova LA, Stepanov RO, Zaytsev OO: Development of physical and technological basis of the controllable formation of densely packed Ge nanocluster arrays on the silicon (100) surface by means of ultrahigh vacuum molecular beam epitaxy. Report on Research Project 2007–3-1.3–25–01–303 of the Science and Innovations Agency of the Russian Federation, A. M. Prokhorov General Physics Institute of the Russian Academy of Sciences, Moscow, Russia 2007. State Reg. No. 0220.0 802501 (VNITC)

2. Hamers RJ, Tromp RM, Demuth JE: Scanning tunneling microscopy of Si(001). Phys Rev B 1986, 34: 5343. 10.1103/PhysRevB.34.5343

3. Chadi DJ: Stabilities of single-layer and bilayer steps on Si(001) surfaces. Phys Rev Lett 1987, 59: 1691. 10.1103/PhysRevLett.59.1691

4. Hu X, Lin Z: Hydrogen adsorption induced phase transitions on Si(100)-c(8 × 8): temperature dependence studied by LEED. Appl Surf Sci 1995, 90: 111. 10.1016/0169-4332(95)00078-X

5. Murray PW, Lindsay R, Leibsle FM, Wincott PL, Thornton G: Direct observation of the c(8 × 8) defect structure on Si(001) using scanning tunnelling microscopy. Phys Rev B 1996, 54: 13468. 10.1103/PhysRevB.54.13468

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