Light emitting diodes for the spectral range λ=3.3–4.3 µm fabricated from InGaAs and InAsSbP solid solutions: Electroluminescence in the temperature range of 20

Light emitting diodes for the spectral range λ=3.3–4.3 µm fabricated from InGaAs and InAsSbP solid solutions: Electroluminescence in the temperature range of 20–180°C (Part 2)

Published:2001-05 Issue:5 Volume:35 Page:598-604
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Aidaraliev M.,Zotova N. V.,Karandashev S. A.,Matveev B. A.,Remennyi M. A.,Stus’ N. M.,Talalakin G. N.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1371629.pdf

Reference11 articles.

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3. N. V. Zotova, S. A. Karandashev, B. A. Matveev, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 33(8), 1010 (1999) [Semiconductors 33, 920 (1999)].

4. S. Kim, M. Erdtmann, D. Wu, et al., Appl. Phys. Lett. 69(11), 1614 (1996).

5. M. Aidaraliev, N. V. Zotova, S. A. Karandashev, et al., Pis’ma Zh. Tekh. Fiz. 24(6), 88 (1998) [Tech. Phys. Lett. 24, 243 (1998)].

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