Electrical and electroluminescent properties of InAsSb-Based LEDs (λ = 3.85–3.95 μm) in the temperature interval 20

Electrical and electroluminescent properties of InAsSb-Based LEDs (λ = 3.85–3.95 μm) in the temperature interval 20–200°C

Published:2012-01 Issue:1 Volume:57 Page:69-73
ISSN:1063-7842
Container-title:Technical Physics
language:en
Short-container-title:Tech. Phys.

Author:

Petukhov A. A.,Kizhaev S. S.,Molchanov S. S.,Stoyanov N. D.,Yakovlev Yu. P.

Publisher

Pleiades Publishing Ltd

Subject

Physics and Astronomy (miscellaneous)

Link

http://link.springer.com/content/pdf/10.1134/S1063784212010203.pdf

Reference12 articles.

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2. M. Aidaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus’, and G. N. Talalakin, Fiz. Tekh. Poluprovodn. (St. Petersburg) 34, 102 (2000) [Semiconductors 34, 104 (2000)].

3. B. L. Sharma and R. K. Purohit, Semiconductor Heterojunctions (Pergamon, Oxford, 1974; Sov. Radio, Moscow, 1979).

4. V. V. Pasynkov and L. K. Chirkin, Semiconductor Devices (Vysshaya Shkola, Moscow, 1987) [in Russian].

5. A. A. Bergh and P. J. Dean, Light Emitting Diodes (Clarendon, Oxford, 1976; Mir, Moscow, 1979).

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