High-temperature luminescence in light-emitting heterostructures with a high potential barriers based on GaSb
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SPIE
Reference10 articles.
1. High-efficiency LEDs of 1.6–2.4 µm spectral range for medical diagnostics and environment monitoring
2. Electroluminescent characteristics of InGaAsSb/GaAlAsSb heterostructure Mid-IR LEDs at high temperatures
3. Electrical and electroluminescent properties of InAsSb-Based LEDs (λ = 3.85–3.95 μm) in the temperature interval 20–200°C
4. Superlinear electroluminescence in GaSb-based heterostructures with high potential barriers
5. Light emitting diodes for the spectral range λ=3.3–4.3 µm fabricated from InGaAs and InAsSbP solid solutions: Electroluminescence in the temperature range of 20–180°C (Part 2)
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