Photoluminescence study of InAsSb/InAsSbP heterostructures grown by low‐pressure metalorganic chemical vapor deposition-Reference-Cited by-同舟云学术

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Photoluminescence study of InAsSb/InAsSbP heterostructures grown by low‐pressure metalorganic chemical vapor deposition

Published:1996-09-09 Issue:11 Volume:69 Page:1614-1616
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kim S.,Erdtmann M.,Wu D.,Kass E.,Yi H.,Diaz J.,Razeghi M.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.117048

Reference10 articles.

Cited by 29 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Mid-infrared electroluminescence from type-II In(Ga)Sb quantum dots;Applied Physics Letters;2020-02-10

2. Thermophotovoltaic Generation of Electricity With InAs0.91Sb0.09 Device;IEEE Transactions on Electron Devices;2018-10

3. A buffer-free method for growth of InAsSb films on GaAs (001) substrates using MOCVD;Journal of Crystal Growth;2017-06

4. Properties of InAsSb films grown on GaSb by metal-organic chemical vapor deposition;Procedia Engineering;2017

5. Lateral diffusion of minority carriers in InAsSb-based nBn detectors;Quantum Sensing and Nanophotonic Devices VIII;2011-01-22

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