Nonmonotonic variations in the concentration of the donor-and acceptor-type radiation defects in silicon irradiated with low-intensity fluxes of β particles-Reference-Cited by-同舟云学术

Nonmonotonic variations in the concentration of the donor-and acceptor-type radiation defects in silicon irradiated with low-intensity fluxes of β particles

Published:2006-12 Issue:12 Volume:40 Page:1375-1377
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Badylevich M. V.,Blokhin I. V.,Golovin Yu. I.,Dmitrievskiĭ A. A.,Kartsev S. V.,Suchkova N. Yu.,Tolotaev M. Yu.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782606120013.pdf

Reference11 articles.

1. V. S. Vavilov, V. F. Kiselev, and B. N. Mukashev, Defects in the Bulk and at the Surface of Silicon (Nauka, Moscow, 1990) [in Russian].

2. B. G. Svensson and J. L. Lindstrom, J. Appl. Phys. 72, 5616 (1992).

3. Yu. I. Golovin, A. A. Dmitrievskiĭ, I. A. Pushnin, and N. Yu. Suchkova, Fiz. Tverd. Tela (St. Petersburg) 46, 1790 (2004) [Phys. Solid State 46, 1851 (2004)].

4. Yu. I. Golovin, A. A. Dmitrievskiĭ, and N. Yu. Suchkova, Fiz. Tverd. Tela (St. Petersburg) 48, 262 (2006) [Phys. Solid State 48, 279 (2006)].

5. D. V. Lang, J. Appl. Phys. 45, 3023 (1974).

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