Effect of low-temperature annealing on characteristics of SiC detectors with radiation-induced defects-Reference-Cited by-同舟云学术

Effect of low-temperature annealing on characteristics of SiC detectors with radiation-induced defects

Published:2007-08 Issue:8 Volume:41 Page:979-983
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Ivanov A. M.,Strokan N. B.,Sadokhin A. V.,Lebedev A. A.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782607080222.pdf

Reference15 articles.

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3. A. M. Ivanov, N. B. Strokan, E. V. Bogdanova, and A. A. Lebedev, Fiz. Tekh. Poluprovodn. (St. Petersburg) 41, 117 (2007) [Semiconductors 41, 115 (2007)].

4. D. Bechevet, M. Glaser, A. Houdayer, et al., Nucl. Instrum. Methods Phys. Res. A 479, 487 (2002).

5. M. Huhtinen, Nucl. Instrum. Methods Phys. Res. A 491, 194 (2002).

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