Low-Temperature Annealing of Electron, Neutron, and Proton Irradiation Effects on SiC Radiation Detectors-Reference-Cited by-同舟云学术

Low-Temperature Annealing of Electron, Neutron, and Proton Irradiation Effects on SiC Radiation Detectors

Published:2023-10 Issue:10 Volume:70 Page:2285-2296
ISSN:0018-9499
Container-title:IEEE Transactions on Nuclear Science
language:
Short-container-title:IEEE Trans. Nucl. Sci.

Author:

Rafí Joan Marc¹^ORCID,Pellegrini Giulio¹,Godignon Philippe¹,Rius Gemma¹^ORCID,Dauderys Vainius¹,Tsunoda Isao²^ORCID,Yoneoka Masashi²,Takakura Kenichiro²^ORCID,Kramberger Gregor³^ORCID,Moll Michael⁴^ORCID

Affiliation:

1. Instituto de Microelectrónica de Barcelona, CNM-CSIC, Campus UAB, Barcelona, Spain

2. National Institute of Technology (KOSEN), Kumamoto College, Kumamoto, Japan

3. Jozef Stefan Institute, Ljubljana, Slovenia

4. European Organization for Nuclear Research (CERN), Geneva, Switzerland

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Link

http://xplorestaging.ieee.org/ielx7/23/10287667/10227313.pdf?arnumber=10227313

Reference57 articles.

1. Radiation Resistance of Silicon Carbide Schottky Diode Detectors in D-T Fusion Neutron Detection

2. Alpha radiation induced space charge stability effects in semi-insulating silicon carbide semiconductors compared to diamond

3. SiCILIA—Silicon Carbide Detectors for Intense Luminosity Investigations and Applications

4. Polarization in Cadmium Telluride Nuclear Radiation Detectors

5. Development of a silicon carbide radiation detector

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