A Review of the Effects of Fast-Neutron Irradiation on the Performance of 4H-SiC Schottky Barrier Detectors

Author:

Ruddy Frank H.1ORCID,Chaudhuri Sandeep K.2ORCID,Mandal Krishna C.2ORCID

Affiliation:

1. Ruddy Consulting, Mount Pleasant, SC, USA

2. Electrical Engineering Department, University of South Carolina, Columbia, SC, USA

Funder

DOE Office of Nuclear Energy’s, Nuclear Energy University Program

South Carolina (SC) National Aeronautics and Space Administration (NASA), Established Program to Stimulate Competitive Research (EPSCoR) Program

SC NASA EPSCoR Research and Education Awards Program

SC Center of Research Excellence (CORE) Innovation

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Reference34 articles.

1. High temperature measurements of n-type 4H-SiC epitaxial Schottky barrier radiation detectors;Mandal

2. The effects of intense gamma-irradiation on the alpha-particle response of silicon carbide semiconductor radiation detectors

3. Effects of Gamma Irradiation on Silicon Carbide Semiconductor Radiation Detectors

4. Study of the radiation resistance of silicon carbide radiation detectors;Ruddy;Trans. Amer. Nucl. Soc.,2004

5. Silicon Carbide Neutron Detectors for Harsh Nuclear Environments: A Review of the State of the Art

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