Simulation of non-ionising energy loss and defect formation in silicon
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference47 articles.
1. A. Vasilescu, G. Lindström, CERN ROSE/TN/2000-02, 2000.
2. Energy Dependence of Proton Damage in Silicon
3. Energy Dependence of Proton-Induced Displacement Damage in Silicon
4. The physics of radiation damage in particle detectors
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