1. Study of characteristics of silicon detectors irradiated with 24 GeV/c protons between −20°C and +20°C
2. Results on radiation hardness of silicon detectors up to neutron fluences of 1015 n/cm2
3. Pion induced displacement damage in silicon devices
4. C. Leroy, M. Glaser, E.H.M. Heijne, P. Jarron, F. Lemeilleur, J. Rioux, C. Soave, I. Trigger, Study of the electrical properties and charge collection of silicon detectors under neutron, proton and gamma irradiation, in: A. Menzione, A. Scribano, (Eds.), Proceedings of the fourth International Conference on Calorimetry in High Energy Physics, World Scientific, Singapore, 1994, pp. 627–634.
5. ATLAS collaboration, ATLAS—Technical Proposal for A General-Purpose pp Experiment at the LHC at CERN, CERN/LHCC/94-43, 1994.