Specific features of molecules’ pyrolysis on the epitaxial surface in the case of growth of the Si1 − x Ge x layers from hydrides in vacuum
Author:
Publisher
Pleiades Publishing Ltd
Subject
Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Link
http://link.springer.com/content/pdf/10.1134/S1063782607010137.pdf
Reference25 articles.
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Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Kinetics of surface pyrolysis of a silane–germane gas mixture under conditions of epitaxial film deposition of Si1–x Ge x solid solutions;Russian Journal of General Chemistry;2015-12
2. Vacuum hydride epitaxy of silicon: kinetics of monosilane pyrolysis on the growth surface;Semiconductors;2011-04
3. The special features of adsorption and the kinetics of decomposition of monosilane molecules on the epitaxial surface of silicon;Russian Journal of Physical Chemistry B;2011-02
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