The special features of adsorption and the kinetics of decomposition of monosilane molecules on the epitaxial surface of silicon-Reference-Cited by-同舟云学术

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The special features of adsorption and the kinetics of decomposition of monosilane molecules on the epitaxial surface of silicon

Published:2011-02 Issue:1 Volume:5 Page:168-175
ISSN:1990-7931
Container-title:Russian Journal of Physical Chemistry B
language:en
Short-container-title:Russ. J. Phys. Chem. B

Author:

Orlov L. K.,Ivin S. V.,Smyslova T. N.

Publisher

Pleiades Publishing Ltd

Subject

Physical and Theoretical Chemistry

Link

http://link.springer.com/content/pdf/10.1134/S1990793111020096.pdf

Reference12 articles.

1. D. W. Greve, Mater. Sci. Eng. 18, 22 (1993).

2. A. V. Potapov, L. K. Orlov, and S. V. Ivin, Thin Solid Films 336, 191 (1999).

3. L. K. Orlov and T. N. Smyslova, Poverkhnost’, No. 11, 99 (2005).

4. L. K. Orlov and T. N. Smyslova, Fiz. Tekh. Poluprovodn. 39, 1320 (2005) [Semiconductors 3, 1275 (2005)].

5. L. K. Orlov and T. N. Smyslova, Fiz. Tekh. Poluprovodn. 40, 45 (2006) [Semiconductors 40, 43 (2006)].

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Kinetics of surface pyrolysis of a silane–germane gas mixture under conditions of epitaxial film deposition of Si1–x Ge x solid solutions;Russian Journal of General Chemistry;2015-12

2. Features of the two-component decomposition of monosilane molecules on a silicon surface under epitaxial-process conditions;Semiconductors;2014-06

3. Specificity of mono- and disilane decomposition at silicon surface under conditions of epitaxial growth;Russian Journal of General Chemistry;2013-12

4. Kinetics of the decomposition of disilane molecules on a silicon growth surface in vacuum chemical epitaxy;Russian Journal of Physical Chemistry B;2013-05

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