A decrease in the density of trapping centers in silicon oxide as a result of radiation-thermal treatment-Reference-Cited by-同舟云学术

A decrease in the density of trapping centers in silicon oxide as a result of radiation-thermal treatment

Published:2007-08 Issue:8 Volume:41 Page:958-961
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Voronkova G. M.,Popov V. D.,Protopopov G. A.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782607080179.pdf

Reference10 articles.

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2. Z. F. Vasil’eva, V. I. Vanin, Sh. N. Islyaev, et al., in Radiation Resistance of Electronic Systems: Stability-99 (SPÉLS-NIIP, Moscow, 1999), No. 2, p. 41 [in Russian].

3. P. J. McWhorter and P. S. Winokur, Appl. Phys. Lett. 48, 133 (1986).

4. C. W. Gwyn, J. Appl. Phys. 40, 4886 (1969).

5. V. S. Pershenkov, V. D. Popov, and A. V. Shal’nov, Surface Radiation Effects in Integrated Microcircuits (Énergoatomizdat, Moscow, 1988) [in Russian].

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