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Modification of MIS Devices by Radio-Frequency Plasma Treatment

  • Published:2019-08 Issue:2 Volume:136 Page:263-266
  • ISSN:1898-794X
  • Container-title:Acta Physica Polonica A
  • language:
  • Short-container-title:Acta Phys. Pol. A

Author:

Andreev D.V.1,Bondarenko G.G.2,Andreev V.V.1,Maslovsky V.M.3,Stolyarov A.A.1

Affiliation:

1. Bauman Moscow State Technical University, the Kaluga branch, 2, Bazhenov Str., Kaluga 248000, Russia

2. National Research University Higher School of Economics, 20, Myasnitskaya Str., Moscow 101000, Russia

3. Moscow Institute of Physics and Technology (State University), 9, Institutskii per., Dolgoprudnyi, Moscow region 141700, Russia

Publisher

Institute of Physics, Polish Academy of Sciences

Subject

General Physics and Astronomy

Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Technique of Time Depend Dielectric Breakdown for the Wafer-Level Testing of Thin Dielectrics of MIS Devices;Russian Microelectronics;2023-12

2. Change in the Charge State of MOS Structures with a Radiation-Induced Charge under High-Field Injection of Electrons;Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques;2023-02

3. Mathematical models of MOS transistors with induced and ion-doped conditions in energy engineering;E3S Web of Conferences;2023

4. Change in the Charge State of MOS Structures with a Radiation-Induced Charge under High-Field Injection of Electrons;Поверхность. Рентгеновские, синхротронные и нейтронные исследования;2023-01-01

5. Programmable set to monitor charge state change of MIS devices under high-fields;2022 Moscow Workshop on Electronic and Networking Technologies (MWENT);2022-06-09
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