Modification of MIS Devices by Irradiation and High-Field Electron Injection Treatments-Reference-Cited by-同舟云学术

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Modification of MIS Devices by Irradiation and High-Field Electron Injection Treatments

Published:2017-08 Issue:2 Volume:132 Page:245-248
ISSN:0587-4246
Container-title:Acta Physica Polonica A
language:en
Short-container-title:Acta Phys. Pol. A

Author:

Andreev D.V.¹,Bondarenko G.G.²,Andreev V.V.¹,Maslovsky V.M.³,Stolyarov A.A.¹

Affiliation:

1. Bauman Moscow State Technical University, Kaluga Branch, 2, Bazhenov St., Kaluga 248000, Russia

2. National Research University Higher School of Economics, 20, Myasnitskaya St., Moscow 101000, Russia

3. Zelenograd Research Institute of Physical Problems, 5, Georgievskiy prosp., Zelenograd, Moscow 103460, Russia

Publisher

Institute of Physics, Polish Academy of Sciences

Subject

General Physics and Astronomy

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Increasing the Charge Stability of Gate Dielectric Films of MIS Structures by Doping Them with Phosphorus;Inorganic Materials: Applied Research;2021-03

2. Use of High-Field Electron Injection into Dielectrics to Enhance Functional Capabilities of Radiation MOS Sensors;Sensors;2020-04-22

3. Use of MIS Sensors of Radiation in High-Field Electron Injection Modes;Journal of Contemporary Physics (Armenian Academy of Sciences);2020-04

4. Charge Effects in the Dielectric Films of MIS Structures under the Concurrent Influence of Radiation and High-Field Electron Injection;Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques;2020-03

5. INTRINSIC GETTERING IN SILICON SUBSTRATE OF MOS STRUCTURES UNDER COMBINED INFLUENCE OF RADIATION AND PULSED MAGNETIC FIELDS;High Temperature Material Processes An International Quarterly of High-Technology Plasma Processes;2020

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