Role of nanoscale AlN and InN for the microwave characteristics of AlGaN/(Al,In)N/GaN-based HEMT
Author:
Publisher
Pleiades Publishing Ltd
Subject
Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Link
http://link.springer.com/content/pdf/10.1134/S1063782611090156.pdf
Reference21 articles.
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5. A. Crespo, M. M. Bellot, et al., IEEE Electron. Dev. Lett. 31(1) (2010). doi:10.1109/LED.2009.2034875.
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