III-Nitride HEMTs for THz Applications
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Publisher
Springer Nature Singapore
Link
https://link.springer.com/content/pdf/10.1007/978-981-19-4105-4_9
Reference25 articles.
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2. Lenka TR, Panda AK. AlGaN/GaN-based HEMT on SiC substrate for microwave characteristics using different passivation layers. Pramana. 2012;79(1):151–63. https://doi.org/10.1007/s12043-012-0290-9.
3. Lenka TR, Dash GN, Panda AK. RF and microwave characteristics of a 10 nm thick InGaN-channel gate recessed HEMT. J Semicond. 2013;34(11):114003. https://doi.org/10.1088/1674-4926/34/11/114003.
4. Zine-eddine T, Zahra H, Zitouni M. Design and analysis of 10 nm T-gate enhancement-mode MOS-HEMT for high power microwave applications. J Sci Adv Mate Dev. 2019;4(1):180–7. https://doi.org/10.1016/j.jsamd.2019.01.001.
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1. Prospects of III–V Semiconductor-Based High Electron Mobility Transistors (HEMTs) Towards Emerging Applications;Lecture Notes in Electrical Engineering;2023-09-03
2. Investigation of the Temperature Impact on the Performance Characteristics of the Field-Plated Recessed Gate III-Nitride HEMT on β-Ga2O3 Substrate;Lecture Notes in Electrical Engineering;2023-09-03
3. Simulation Modeling of AlGaN/AlN/GaN Nano-HEMT on β-Ga2O3 Substrate for Emerging Terahertz Applications;2022 IEEE International Conference on Emerging Electronics (ICEE);2022-12-11
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