Simulation Modeling of AlGaN/AlN/GaN Nano-HEMT on β-Ga<sub>2</sub>O<sub>3</sub> Substrate for Emerging Terahertz Applications-Reference-Cited by-同舟云学术

Simulation Modeling of AlGaN/AlN/GaN Nano-HEMT on β-Ga₂O₃ Substrate for Emerging Terahertz Applications

Published:2022-12-11 Issue: Volume: Page:
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Container-title:2022 IEEE International Conference on Emerging Electronics (ICEE)
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Author:

Rao G. Purnachandra¹,Baruah Nistha¹,Lenka Trupti Ranjan¹,Singh Rajan²,Sadaf Sharif Md.³,Nguyen Hieu Pham Trung⁴

Affiliation:

1. National Institute of Technology,Department of Electronics and Communication Engineering,Silchar,India

2. MLR Institute of Technology,Department of Electronics and Communication Engineering,Hyderabad-43,Telangana,India

3. Institut national de la recherche scientifique (INRS)-Université du Québec,Center for Energy Materials and Telecommunications (EMT),Canada

4. New Jersey Institute of Technology,Department of Electrical and Computer Engineering,Newark,USA

Funder

Science and Engineering Research Board

Publisher

IEEE

Link

Reference25 articles.

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