Operation Principle of AlGaN/GaN HEMT
Author:
Publisher
Springer Nature Singapore
Link
https://link.springer.com/content/pdf/10.1007/978-981-19-2165-0_8
Reference26 articles.
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5. M. A. Khan, et al., Observation of a two-dimensional electron gas in low pressure metalorganic chemical vapor deposited GaN/AlGaN heterojunctions. Appl. Phys. Lett. 60, 3027–3029 (1992)
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