Modeling of Forward Gate Leakage Current in MOSHEMT Using Trap-Assisted Tunneling and Poole–Frenkel Emission-Reference-Cited by-同舟云学术

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Modeling of Forward Gate Leakage Current in MOSHEMT Using Trap-Assisted Tunneling and Poole–Frenkel Emission

Published:2016-06 Issue:6 Volume:63 Page:2346-2352
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Swain Raghunandan,Jena Kanjalochan,Lenka Trupti Ranjan^ORCID

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/7473958/07463529.pdf?arnumber=7463529

Cited by 24 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Sensitivity estimation of biosensor in a tapered cavity MOSHEMT;Physica Scripta;2024-04-08

2. Effect of source and drain electrode positions on the performance of bottom gate organic thin film transistor;Engineering Research Express;2024-03-01

3. Forward Bias Gate Leakage Mechanism in δ-doped β-(Al_xGa_1-x)₂O₃/Ga₂O₃ HFET;2023 IEEE 33rd International Conference on Microelectronics (MIEL);2023-10-16

4. Design and simulation of T‐gate AlN/β‐Ga₂O₃ HEMT for DC, RF and high‐power nanoelectronics switching applications;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2023-06-30

5. Degradation of High-Power UVC Light-Emitting Diodes via Emission-Activated Nitrogen Vacancy Generation;IEEE Transactions on Electron Devices;2023-06

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