Degradation of High-Power UVC Light-Emitting Diodes via Emission-Activated Nitrogen Vacancy Generation
Author:
Affiliation:
1. Department of Photonics, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung University, Hsinchu, Taiwan
Funder
National Science and Technology Council
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/10136238/10120680.pdf?arnumber=10120680
Reference35 articles.
1. Degradation processes of 280 nm high power DUV LEDs: impact on parasitic luminescence
2. Modeling of Forward Gate Leakage Current in MOSHEMT Using Trap-Assisted Tunneling and Poole–Frenkel Emission
3. Stability and degradation of AlGaN-based UV-B LEDs: Role of doping and semiconductor defects
4. Vertical conductivity and Poole–Frenkel-ionization of Mg acceptors in AlGaN short-period superlattices with high Al mole fraction
5. Degradation in AlGaN-based UV-C LEDs under constant current stress: A study on defect behaviors
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