1. S. Nakamura, M. Senoh, N. Iwasa, T. Yamada, and T. Mukai, Jpn. J. Appl. Phys. 34 Pt. 2, L1332 (1995).
2. K. G. Zolina, V. E. Kudryashov, A. N. Turkin, A. E. Yunovich, and S. Nakamura, MRTS Int’l. J. Nitride Semicond. Res., 1/11; http://nsr.mij.mrs.org/1/11 .
3. A. N. Kovalev, V. E. Kudryashov, F. I. Manyachin, A. N. Turkin, K. Zolina, A. E. Yunovich, Abstracts of the 23rd International Symposium on Semiconductor Compounds, ISCS-23 (St. Peterburg, Russia, 1996), Abstr. 03.P3.04.
4. K. G. Zolina, V. E. Kudryashov, A. N. Turkin, and A.É Yunovich, Fiz. Tekh. Poluprovodn. 31, 1055 (1997) [Semiconductors 31, 901 (1997)].
5. A. E. Yunovich, A. N. Kovalev, V. E. Kudryashov, F. I. Manyachin, A. N. Turkin, and K. Zolina, Abstracts of MRS Fall Meeting (Boston, 1996), Symp. N, Abstr. N9-37, 347 (1996).