1. 1. III-Nitride Devices and Nanoengineering. Editor Zhe Chuan Feng. National Taiwan University. Publ. by Imperial College Press, 2008.
2. 2. Morkoc H. Handbook of Nitride Semiconductors and Devices: GaN-based Optical and Electronic Devices. Vol. 3. Wiley-VCH, 2009.
3. 3. Reshchikov M.A., Morkoç H. Luminescence properties of defects in GaN (Review). J. Appl. Phys. 2005. 97. Р. 061301(95).
4. 4. Grehov I.V., Serezhkin Yu.N. Lavinnyj proboj p-n perehoda v poluprovodnikah. L.: Energiya, 1980. (in Russian)
5. 5. Konakova R.V., Kordosh P., Thorik Yu.A., Fajnberg V.I., Shtofanik F. Prognozirovanie nadezhnosti poluprovodnikovyh lavinnyh diodov. Kiev, Naukova dumka, 1986. (in Russian)