On the shift of the electroluminescence spectra of In x Ga1 − x N/GaN structures with various indium contents and various substrate materials caused by the stark effect and mechanical stresses-Reference-Cited by-同舟云学术

On the shift of the electroluminescence spectra of In x Ga1 − x N/GaN structures with various indium contents and various substrate materials caused by the stark effect and mechanical stresses

Published:2015-08 Issue:8 Volume:49 Page:1007-1011
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Veleschuk V. P.,Vlasenko A. I.,Kisselyuk M. P.,Vlasenko Z. K.,Khmil’ D. N.,Borshch V. V.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782615080229.pdf

Reference14 articles.

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3. L. Guo, X. W. Hongling Xiao, and B. Wang, J. Cryst. Growth 298, 522 (2007).

4. S. Morawiec, R. P. Sarzala, and W. Nakwaski, Appl. Phys. A 113, 801 (2013).

5. E. A. Shevchenko, V. N. Zhmerik, A. M. Mizerov, A. A. Sitnikova, S. V. Ivanov, and A. A. Toropov, Semiconductors 46, 998 (2012).

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