Creation of effective sources of white radiation based on GaP(As,N) on silicon substrates

Abstract

Abstract The article is devoted to the study of light-emitting heterostructures based on GaP(As,N) dilute nitrides, monolithically grown on silicon substrates by plasma-assisted molecular beam epitaxy. Current-voltage characteristics and electroluminescence spectra of the grown heterostructures are obtained. For the first time, a unique effect is observed in GaP(As,N) dilute nitrides - the appearance of white electroluminescence when a reverse bias is applied. The result was obtained due to the original design of the light-emitting heterostructure and the unique properties of dilute nitride solid solutions.