Plasma-chemical synthesis of silicon carbonitride films from trimethyl(diethylamino)silane
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Published:2010-08
Issue:4
Volume:36
Page:497-505
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ISSN:1087-6596
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Container-title:Glass Physics and Chemistry
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language:en
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Short-container-title:Glass Phys Chem
Author:
Kosinova M. L.,Rumyantsev Yu. M.,Chernyavskii L. I.,Nikulina L. D.,Kesler V. G.,Maximovskii E. A.,Fainer N. I.,Rakhlin V. I.,Voronkov M. G.,Kuznetsov F. A.
Publisher
Pleiades Publishing Ltd
Subject
Materials Chemistry,Condensed Matter Physics,Ceramics and Composites
Reference14 articles.
1. Fainer, N.I., Kosinova, M.L., Rumyantsev, Yu.M., Maximovskii, E.A., and Kuznetsov, F.A., Thin Silicon Carbonitride Films Are Perspective Low-k Materials, J. Phys. Chem. Solids, 2008, vol. 69, nos. 2–3, pp. 661–668. 2. Fainer, N., Rumyantsev, Y., Kosinova, M., Maximovski, E., Kesler, V., Kirienko, V., and Kuznetsov, F., Low-k Dielectrics on Base of Silicon Carbon Nitride Films, Surf. Coat. Technol., 2007, vol. 201, nos. 22–23, pp. 9269–9274. 3. Fainer, N.I., Kosinova, M.L., Rumyantsev, Yu.M., Maksimovskii, E.A., Kuznetsov, F.A., Kesler, V.G., Kirienko, V.V., Han Bao-Shan, and Lu Cheng, Synthesis and Physicochemical Properties of Nanocrystalline Silicon Carbonitride Films Deposited by Microwave Plasma from Organoelement Compounds, Fiz. Khim. Stekla, 2005, vol. 31, no. 4, pp. 573–580 [Glass Phys. Chem. (Engl. transl.), 2005, vol. 31, no. 4, pp. 422–432]. 4. Smirnova, T.P., Badalyan, A.M., Borisov, V.O., Kaichev, V.V., Bakhturova, L.F., Kichai, V.N., Rakhlin, V.I., and Shainyan, B.A., Plasma Deposition and Properties of Silicon Carbonitride Films, Neorg. Mater., 2005, vol. 41, no. 7, pp. 808–815 [Inorg. Mater. (Engl. transl.), 2005, vol. 41, no. 7, pp. 706–712]. 5. Rakhlin, V.I., Tsirendorzhieva, I.P., Voronkov, M.G., Nikulina, L.D., Sysoev, S.V., and Kosinova, M.L., Characterization of Some Trimethyl(organylamino)silanes as Precursors for the Preparation of Silicon Carbonitride Films, Fiz. Khim. Stekla, 2010, vol. 36, no. 3 [Glass Phys. Chem., (Engl. transl.), 2010, vol. 36, no. 3, pp. 376–381].
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