Study of chemical bonds and element composition of silicon oxycarbonitride films by the methods of XP-, IR-, and energy-dispersive spectroscopy
Author:
Publisher
Pleiades Publishing Ltd
Subject
Materials Chemistry,Condensed Matter Physics,Ceramics and Composites
Link
http://link.springer.com/content/pdf/10.1134/S1087659617050042.pdf
Reference27 articles.
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4. Soto, G., Samano, E.C., Machorro, R., and Cota, L., Growth of SiC and SiCxNy films by pulsed laser ablation of SiC in Ar and N2 environments, J. Vac. Sci. Technol. A, 1998, vol. 16, pp. 1311–1315.
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