Growth of SiC and SiCxNy films by pulsed laser ablation of SiC in Ar and N2 environments-Reference-Cited by-同舟云学术

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Growth of SiC and SiCxNy films by pulsed laser ablation of SiC in Ar and N2 environments

Published:1998-05 Issue:3 Volume:16 Page:1311-1315
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Soto G.,Samano E. C.,Machorro R.,Cota L.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.581143

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