Author:
Egorkin V. I.,Zemlyakov V. E.,Nezhentsev A. V.,Garmash V. I.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference16 articles.
1. Braslau, N., Gunn, J.B., and Staples, J.L., Metalsemiconductor contacts for GaAs bulk effect devices, Solid-State Electron., 1967, vol. 10, no. 5, pp. 381–383.
2. Ivanov, V.N., Kovalenko, L.E., Sumskaya, T.S., Chelyubeev, V.N., and Yashnik, V.M., Morphology and structure of annealed ohmic contacts to electron GaAs, Elektron. Tekh., Ser. 2: Poluprovodn. Prib., 1988, vol. 195, no. 4, pp. 49–53.
3. Iliadis, A. and Singer, K.E., Metallurgical behaviour of Ni/Au-Ge ohmic contacts to GaAs, Solid State Commun., 1984, vol. 49, no. 1, pp. 99–101.
4. Wang, L.C. et al., Low-resistance nonspiking ohmic contact for AlGaAs/GaAs high electron mobility transistors using the Ge/Pd scheme, Appl. Phys. Lett., 1989, vol. 54, no. 26, pp. 2677–2679.
5. Jones, K.A., Linfield, E.H., and Frost, J.E.F., Contact resistances of NiGeAu, PdGeTiPt, and TiPd ohmic contacts to GaAs and their temperature dependence from 4.2 to 350 K, Appl. Phys. Lett., 1996, vol. 69, no. 27, pp. 4197–4199.
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