Author:
Egorkin V. I.,Zemlyakov V. E.,Nezhentsev A. V.,Garmash V. I.,Kalyuzhnyi N. A.,Mintairov S. A.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference12 articles.
1. Daniltsev, V.M., Demidov, E.V., Drozdov, M.N., Drozdov, Yu.N., Kraev, S.A., Surovegina, E.A., Shashkin, V.I., and Yunin, P.A., Heavily doped GaAs:Te layers grown by MOVPE using diisopropyl telluride as a source, Semiconductors, 2016, vol. 50, no. 11, pp. 1439–1442.
2. Shen, L. et al., Ohmic contacts with ultra-low optical loss on heavily doped n-type InGaAs and InGaAsP for InP-based photonic membranes, IEEE Photon. J., 2016, vol. 8, no. 1, pp. 1–10.
3. Yermolayev, D.M. et al., Terahertz detection in a slit-grating-gate field-effect-transistor structure, Solid-State Electron., 2013, vol. 86, pp. 64–67.
4. Catalano, A.P. et al., Numerical analysis of the thermal behavior sensitivity to technology parameters and operating conditions in InGaP/GaAs HBTs, in Proceedings of the Compound Semiconductor Integrated Circuit Symposium CSICS, 2017, IEEE, 2017, pp. 1–4.
5. Koop, E.J. et al., On the annealing mechanism of AuGe/Ni/Au ohmic contacts to a two-dimensional electron gas in GaAs/AlxGa1 – xAs heterostructures, Semicond. Sci. Technol., 2013, vol. 28, no. 2, pp. 1–9.
Cited by
2 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献