Influence of optical properties of the SOI structure on the wafer temperature during rapid thermal annealing-Reference-Cited by-同舟云学术

Influence of optical properties of the SOI structure on the wafer temperature during rapid thermal annealing

Published:2012-01 Issue:1 Volume:41 Page:15-24
ISSN:1063-7397
Container-title:Russian Microelectronics
language:en
Short-container-title:Russ Microelectron

Author:

Rudakov V. I.,Ovcharov V. V.,Prigara V. P.

Publisher

Pleiades Publishing Ltd

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063739712010106.pdf

Reference13 articles.

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2. Singh, R., Rapid Thermal Processing, J. Appl. Phys., 1988, vol. 63, no. 8, pp. R50–R110.

3. Averkin, A.N., Orlikovskii, A.A., and Rudenko, K.V., Plasma-Immersion Ion Implantation of Boron for the Formation of Ultrashallow p +-n Junctions in Silicon, Proc. 3rd Int. Symp. on Theoretical and Applied Plasma Chemistry, vol. 2, Ples, 2002, pp. 360–362.

4. Fiory, A.T., Recent Developments in Rapid Thermal Processing, JOM, June 2005, pp. 1–26.

5. Nulman, J. Antonio, S., and Blonigan, W. Observation of Silicon Wafer Emissivity in Rapid Thermal Processing Chambers for Pyrometric Temperature Monitoring, Appl. Phys. Lett., 1990, vol. 56, no. 25, pp. 2513–2515.

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