Temperature bistability in a silicon wafer with a doped layer on lamp-based heating-Reference-Cited by-同舟云学术

Temperature bistability in a silicon wafer with a doped layer on lamp-based heating

Published:2015-06 Issue: Volume:34 Page:312-325
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Prigara V.P.,Ovcharov V.V.,Rudakov V.I.

Funder

Russian Foundation for Basic Research

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference23 articles.

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5. Flash lamp annealing with millisecond pulses for ultra-shallow boron profiles in silicon

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