Effects of thermal transport properties on temperature distribution within silicon wafer

Author:

Wang Ai-hua,Niu Yi-hong,Chen Tie-jun,Hsu P. F.

Publisher

Springer Science and Business Media LLC

Subject

Metals and Alloys,General Engineering

Reference15 articles.

1. FUKUDA H. Rapid thermal processing for future semiconductor devices [M]. San Diego: Elsevier, 2003:135–140.

2. JEFFREY M, JAMES W, DAVID M O, SHRINIVAS S, JEFF H, WANG Y. Impact of pattern and LSA stitching effects and processing parameters on reflectance and stress distribution for thermal annealing technologies [C]// 17th IEEE International Conference on Advanced Thermal Processing of Semiconductors. New York: IEEE, 2009: 214–221.

3. TAKAGI R, LIU Kang-zhi. Model-based control for rapid thermal processing of semiconductor wafers [J]. IEEE Transactions on Industry Applications, 2011, 131(2): 159–165.

4. REICHEL D, SKORUPA W, LERCH W, GELPEY J C. Temperature measurement in rapid thermal processing with focus on the application to flash lamp annealing [J]. Critical Reviews in Solid State and Materials Sciences, 2011, 36(2): 102–128.

5. SHIMIZU E, SUGAWARA S, NAKATA H. Computational analysis of wafer temperature non-uniformity in MOVPE system [J]. Journal of Crystal Growth, 2004, 266(1/3): 340–346.

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