The mechanisms of hole scattering in p-Hg0.8Cd0.2Te crystals at low temperatures-Reference-Cited by-同舟云学术

The mechanisms of hole scattering in p-Hg0.8Cd0.2Te crystals at low temperatures

Published:2002-12 Issue:12 Volume:36 Page:1332-1340
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Bogoboyashchii V. V.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1529242.pdf

Reference28 articles.

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3. I. M. Tsidil’kovskii, G. I. Kharus, and N. G. Shelushinina, Impurity States and Transport Phenomena in Zero-Gap Semiconductors (Ural. Nauchn. Tsentr Akad. Nauk SSSR, Sverdlovsk, 1987).

4. B. Ridley, Quantum Processes in Semiconductors (Clarendon, Oxford, 1982; Mir, Moscow, 1986).

5. V. V. Bogoboyashchii, A. I. Elizarov, V. A. Petryakov, et al., Fiz. Tekh. Poluprovodn. (Leningrad) 21, 1469 (1987) [Sov. Phys. Semicond. 21, 893 (1987)].

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