Defect structure of HgCdTe films grown by molecular beam epitaxy on Si substrates-Reference-Cited by-同舟云学术

Defect structure of HgCdTe films grown by molecular beam epitaxy on Si substrates

Published:2012-01-23 Issue:3 Volume:27 Page:035001
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Izhnin I I,Izhnin A I,Savytskyy H V,Vakiv M M,Stakhira Y M,Fitsych O E,Yakushev M V,Sorochkin A V,Sabinina I V,Dvoretsky S A,Sidorov Yu G,Varavin V S,Pociask-Bialy M,Mynbaev K D

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. Defects in the crystal structure of Cd x Hg1 − x Te layers grown on the Si (310) substrates

2. Ex Situ Thermal Cycle Annealing of Molecular Beam Epitaxy Grown HgCdTe/Si Layers

3. Reduction of Dislocation Density in HgCdTe on Si by Producing Highly Reticulated Structures

4. Molecular Beam Epitaxy Growth of HgCdTe on Large-Area Si and CdZnTe Substrates

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