Background donor concentration in HgCdTe-Reference-Cited by-同舟云学术

Background donor concentration in HgCdTe

Published:2015-01-01 Issue:3 Volume:23 Page:
ISSN:1896-3757
Container-title:Opto-Electronics Review
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Author:

Izhnin I.I.,Mynbaev K.D.,Voitsekhovsky A.V.,Korotaev A.G.,Fitsych O.I.,Pociask−Bialy M.,Dvoretsky S.A.

Abstract

AbstractStudies of background donor concentration (BDC) in HgCdTe samples grown with different types of technology were performed with the use of ion milling as a means of eliminating the compensating acceptors. In bulk crystals, films grown with liquid phase epitaxy and films fabricated with molecular beam epitaxy (MBE) on Si substrates, BDC of the order of ~10

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Radiation,General Materials Science

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