Majority‐carrier mobility in p‐type Hg1−xCdxTe-Reference-Cited by-同舟云学术

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Majority‐carrier mobility in p‐type Hg1−xCdxTe

Published:1987-09 Issue:5 Volume:5 Page:3035-3039
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Meyer J. R.,Bartoli F. J.,Hoffman C. A.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.574210

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Molecular Beam Epitaxy of HgCdTe Materials and Detectors;Comprehensive Semiconductor Science and Technology;2011

2. Multicarrier conduction and Boltzmann transport analysis of heavy hole mobility in HgCdTe near room temperature;Journal of Applied Physics;2009-12

3. The mechanisms of hole scattering in p-Hg0.8Cd0.2Te crystals at low temperatures;Semiconductors;2002-12

4. Ionization energy of copper in Hg0.8Cd0.2Te crystals under conditions of light and intermediate doping;Semiconductors;2000-08

5. Transport properties of narrow-gap II-VI compound semiconductors;Narrow-gap II–VI Compounds for Optoelectronic and Electromagnetic Applications;1997

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