Fabrication Methods for Nanowire Tunnel FET with Locally Concentrated Silicon-germanium Channel-Reference-Cited by-同舟云学术

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Fabrication Methods for Nanowire Tunnel FET with Locally Concentrated Silicon-germanium Channel

Published:2019-02-28 Issue:1 Volume:19 Page:18-23
ISSN:1598-1657
Container-title:JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
language:en
Short-container-title:JSTS

Author:

Lee Junil,Lee Ryoongbin,Kim Sihyun,Park Euyhwan,Kim Hyun-Min,Lee Kitae,Kim Sangwan,Park Byung-Gook

Publisher

The Institute of Electronics Engineers of Korea

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of sidewall spacer materials and gate underlap length on negative capacitance double-gate tunnel field-effect transistor (NCDG-TFET);Solid-State Electronics;2022-12

2. Switching Performance Investigation of a Gate-All-Around Core-Source InGaAs/InP TFET;Transactions on Electrical and Electronic Materials;2020-11-10

3. A More Accurate Analytical DC Compact Modeling of Tunneling Field-Effect Transistor for SPICE Simulation;JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE;2019-12-31

4. Si‐core/SiGe‐shell channel nanowire FET for sub‐10‐nm logic technology in the THz regime;ETRI Journal;2019-10-14

5. Two-dimensional analytical modeling for electrical characteristics of Ge/Si SOI-tunnel FinFETs;Superlattices and Microstructures;2019-07

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