Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Reference27 articles.
1. M. Saremi, A. Afzali-Kusha, S. Mohammadi, Ground plane fin-shaped field effect transistor (GP-FinFET): A FinFET for low leakage power circuits. Microelec. Eng. 95, 74–82 (2012)
2. J. Lee, R. Lee, S. Kim, E. Park, H.-M. Kim, K. Lee, S. Kim, B.-G. Park, Fabrication methods for nanowire tunnel FET with locally concentrated Silicon-germanium channel. J. Semicond. Technol. Sci. 19(1), 18–23 (2019). https://doi.org/10.5573/JSTS.2019.19.1.018
3. S. Glass, N. von den Driesch, K. Narimani, D. Buca, G. Mussler, S. Mantl, Q.-T. Zhao, SiGe based line tunneling field-effect transistors. Compos. nanoélectroniques 18(1), 1–10 (2018)
4. S. Blaeser, S. Glass, K. Narimani, N. Driesch, S. Wirths, T. Tiedemann, S. Trellenkamp, D. Buca, Q.T. Zhao, S. Mantl, P.G.I. Pgi-, F. Jülich, Novel SiGe/Si line tunneling TFET with high I on at low V DD and constant SS. IEEE Int. Electron. Devices. Meeting. IEDM. 9(2), 608–611 (2015)
5. A.M. Walke, A. Vandooren, R. Rooyackers, D. Leonelli, A. Hikavyy, R. Loo, A.S. Verhulst, K.H. Kao, C. Huyghebaert, G. Groeseneken, V.R. Rao, K.K. Bhuwalka, M.M. Heyns, N. Collaert, A.V.Y. Thean, Fabrication and analysis of a Si/Si0.55Ge0.45 heterojunction line tunnel FET. IEEE Trans. Electron. Devices. 61(3), 707–715 (2014). https://doi.org/10.1109/TED.2014.2299337
Cited by
7 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献