Two-dimensional analytical modeling for electrical characteristics of Ge/Si SOI-tunnel FinFETs-Reference-Cited by-同舟云学术

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Two-dimensional analytical modeling for electrical characteristics of Ge/Si SOI-tunnel FinFETs

Published:2019-07 Issue: Volume:131 Page:30-39
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Chander S.,Baishya S.,Sinha S.K.,Kumar S.,Singh P.K.,Baral K.,Tripathy M.R.,Singh A.K.,Jit S.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference33 articles.

1. Tunnel field-effect transistors as energy efficient electronic switches;Ionescu;Nature,2011

2. Low-voltage tunnel transistors for beyond CMOS logic;Seabaugh;Proc. IEEE,2010

3. Heterojunction fully depleted SOI-TFET with oxide/source overlap;Chander;Superlattice. Microst.,2015

4. A compact 2-D analytical model for electrical characteristics of double-gate tunnel field-effect transistors with a SiO2/High-k stacked gate-oxide structure;Kumar;IEEE Trans. Electron Devices,2016

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