Leaky-integrate-fire neuron based on vertically extended drain Si<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si58.svg" display="inline" id="d1e1624"><mml:msub><mml:mrow/><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:math>Ge<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si59.svg" display="inline" id="d1e1636"><mml:msub><mml:mrow/><mml:mrow><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:math> source TFET: Ultra-energy-efficient and high speed design-Reference-Cited by-同舟云学术

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Leaky-integrate-fire neuron based on vertically extended drain Si1−xGex source TFET: Ultra-energy-efficient and high speed design

Published:2024-06 Issue: Volume:148 Page:106182
ISSN:1879-2391
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Priyanka ,Singh Sangeeta,Panchore Meena^ORCID

Publisher

Elsevier BV

Reference51 articles.

1. Tunnel field-effect transistors as energy-efficient electronic switches;Ionescu;Nature,2011

2. Low-voltage tunnel transistors for beyond CMOS logic;Seabaugh;Proc. IEEE,2010

3. A new definition of threshold voltage in tunnel FETs;Boucart;Solid State Electron.,2008

4. A compact 2-D analytical model for electrical characteristics of double- gate tunnel field-effect transistors with a SiO2/high-k stacked gate-oxide structure;Kumar;IEEE Trans. Electron Devices,2016

5. Two-dimensional analytical modeling for electrical characteristics of Ge/Si SOI-tunnel FinFETs;Chander;Superlattices Microstruct.,2019

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