34.4: Invited Paper: Microcrystalline Silicon: An emerging Material for Stable Thin Film Transistors
Author:
Publisher
Wiley
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1889/1.1832479/fullpdf
Reference9 articles.
1. Polycrystalline Silicon Thin-Film Transistors
2. I. D. French, S. C. Deane, and P. Roca i Cabarrocas, Proceedings IDW 2001, Japan.onger., S., and Loch, K. D. (eds.). Ethics and computer use. Commun. SID 38, 12 (1996).
3. Hole and electron field-effect mobilities in nanocrystalline silicon deposited at 150 °C
4. Plasma enhanced chemical vapor deposition of silicon thin films for large area electronics
5. Ion bombardment effects on microcrystalline silicon growth mechanisms and on the film properties
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. n+-doped-layer-free microcrystalline silicon thin film transistors fabricated with the CuMg as source/drain metal;Applied Physics Letters;2007-07-09
2. 70.4: A 14.1inch AMOLED Display using Highly Stable PECVD based Microcrystalline Silicon TFT Backplane;SID Symposium Digest of Technical Papers;2006
3. Intrinsic and Doped m c-Si:H TFT Layers using 13.56 MHz PECVD at 250°C;MRS Proceedings;2004
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