P-9: Numerical Analysis on Temperature Dependence of Characteristics of Amorphous In-Ga-Zn-Oxide TFT-Reference-Cited by-同舟云学术

P-9: Numerical Analysis on Temperature Dependence of Characteristics of Amorphous In-Ga-Zn-Oxide TFT

Published:2009 Issue:1 Volume:40 Page:1110
ISSN:0097-966X
Container-title:SID Symposium Digest of Technical Papers
language:en
Short-container-title:SID Symposium Digest

Author:

Godo Hiromichi,Kawae Daisuke,Yoshitomi Shuhei,Sasaki Toshinari,Ito Shunichi,Ohara Hiroki,Miyanaga Akiharu,Yamazaki Shunpei

Publisher

Wiley

Reference9 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. T. C. Fung, C. S. Chuang, C. Chen, K. Abe, H. Kumomi and J. Kanicki, “2-D Numerical Simulation of High Performance Amorphous In-Ga-Zn-O TFTs for Flat Panel Displays,” Proc. AM-FPD '08, 251–252 (2008).

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