The role of intrinsic trap states in the semiconductor/insulating interface on the electrical performance of spray-coated thin-film transistors-Reference-Cited by-同舟云学术

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The role of intrinsic trap states in the semiconductor/insulating interface on the electrical performance of spray-coated thin-film transistors

Published:2022-11 Issue: Volume:151 Page:106984
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Braga João P.^ORCID,Amorim Cleber A.^ORCID,De Lima Guilherme R.^ORCID,Gozzi Giovani^ORCID,Fugikawa-Santos Lucas^ORCID

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference32 articles.

1. High-performance flexible ZnO thin-film transistors by atomic layer deposition;Wang;IEEE Electron. Device Lett.,2019

2. Enhanced performance in Al-doped ZnO based transparent flexible transparent thin-film transistors due to oxygen vacancy in ZnO film with Zn–Al–O interfaces fabricated by atomic layer deposition;Li;ACS Appl. Mater. Interfaces,2017

3. Transient, biocompatible electronics and energy harvesters based on ZnO;Dagdeviren;Small,2013

4. High-performance Zinc-Tin-Oxide thin film transistors based on environment friendly solution process;Zhang;Curr. Appl. Phys.,2019

5. Oxygen vacancies in ZnO;Janotti;Appl. Phys. Lett.,2005

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1. Ultrafast photoresponse in ultraviolet detectors based on zinc oxide nanorods: the effect of a graphene capping layer;Journal of Materials Science: Materials in Electronics;2023-01

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