Implementation of High‐Performance Solution‐Processed Amorphous Indium–Gallium–Zinc–Oxide Thin‐Film Transistors with Low Charge Traps by Microwave Heat Treatment of Low Thermal Budget-Reference-Cited by-同舟云学术

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Implementation of High‐Performance Solution‐Processed Amorphous Indium–Gallium–Zinc–Oxide Thin‐Film Transistors with Low Charge Traps by Microwave Heat Treatment of Low Thermal Budget

Published:2021-06-06 Issue:14 Volume:218 Page:2100140
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Min Jin-Gi¹,Cho Won-Ju¹^ORCID

Affiliation:

1. Department of Electronic Materials Engineering Kwangwoon University Seoul Gwangun-ro 20, Nowon-gu 139-701 Republic of Korea

Funder

National Research Foundation of Korea

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.202100140

Reference28 articles.

1. H.Godo D.Kawae S.Yoshitomi T.Sasaki S.Ito H.Ohara A.Miyanaga S.Yamazaki inSID Symposium Digest of Technical Papers Vol.40 2009 pp.1110–1112.

2. Low frequency noise in long channel amorphous In–Ga–Zn–O thin film transistors

3. High performance thin film transistors with cosputtered amorphous indium gallium zinc oxide channel

4. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

5. The Mobility Enhancement of Indium Gallium Zinc Oxide Transistors via Low-temperature Crystallization using a Tantalum Catalytic Layer

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