The Mobility Enhancement of Indium Gallium Zinc Oxide Transistors via Low-temperature Crystallization using a Tantalum Catalytic Layer
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/s41598-017-11461-0.pdf
Reference43 articles.
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3. Hong, S. et al. A Review of Multi-Stacked Active-Layer Structures for Solution-Processed Oxide Semiconductor Thin-Film Transistors. J. Inf. Disp. 17, 93–101 (2016).
4. Nam, Y. et al. Beneficial Effect of Hydrogen in Aluminum Oxide Deposited through the Atomic Layer Deposition Method on the Electrical Properties of an Indium-Gallium-Zinc Oxide Thin-Film Transistors. J. Inf. Disp. 17, 65–71 (2016).
5. Nathan, A. et al. Amorphous Silicon Thin Film Transistor Circuit Integration for Organic LED Displays on Glass and Plastic. IEEE J. Solid-State Circuits. 39, 1477–1486 (2004).
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