Spontaneous formation of an orderedc(4×2)−(2×1)domain pattern on Ge(001)
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.57.R6803/fulltext
Reference22 articles.
1. Vacancy-Vacancy Interaction on Ge-Covered Si(001)
2. Reversal of Step Roughness on Ge-Covered Vicinal Si(001)
3. Ge-Induced Reversal of Surface Stress Anisotropy on Si(001)
4. Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)
5. Surface stress and interface formation
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